Patent · US Active

Reduction of surface recombination losses in micro-LEDs

US11581457B1 · kind B1 · utility

0Cited by

15References

20Claims

0Family size

Assignee

Meta Platforms Technologies, LLC · US

Inventors

Thomas Lauermann · Heilbronn, DE
Stephan Lutgen · Regensburg, DE
David Hwang · Fort Collins, US

Key dates

Filing date	Apr 27, 2021
Grant date	Feb 14, 2023
Priority date	—
Expiry date	May 2, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8242
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.