Submicron sized silicon powder with low oxygen content
US11581529B2 · kind B2 · utility
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Key dates
| Filing date | May 6, 2020 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Apr 6, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A submicron sized Si based powder having an average primary particle size between 20 nm and 200 nm, wherein the powder has a surface layer comprising SiOx, with 0<x<2, the surface layer having an average thickness between 0.5 nm and 10 nm, and wherein the powder has a total oxygen content equal or less than 3% by weight at room temperature. The method for making the powder comprises a step where a Si precursor is vaporized in a gas stream at high temperature, after which the gas stream is quenched to obtain Si particles, and the Si particles are quenched at low temperature in an oxygen containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.