Vertical-cavity surface-emitting laser with dense epi-side contacts
US11581705B2 · kind B2 · utility
1Cited by
6References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 19, 2020 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | May 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.