Compositions and methods for the deposition of silicon oxide films
US11584854B2 · kind B2 · utility
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2References
17Claims
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Key dates
| Filing date | Jun 15, 2020 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Jun 15, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.