Systems, circuits, and methods to detect gate-open failures in MOS based insulated gate transistors
US11585844B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2021 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Sep 9, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2642
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system to detect gate-open failures in a MOS based insulated gate transistor can include a detection circuit, including a first circuit configured to measure a drain-source voltage across the MOS based insulated gate transistor, a first comparator circuit can be configured to compare the measured drain-source voltage to a threshold drain-source conduction voltage indicating a conduction state of a channel of the MOS based insulated gate transistor, a second circuit can be configured to measure a gate voltage applied at a gate of the MOS-based insulated gate transistor, a second comparator circuit can be configured to compare the gate voltage applied at the gate to a threshold gate voltage for the MOS based insulated gate transistor to provide an indication of whether the gate voltage applied at the gate is sufficient to activate conduction in the channel and a logic circuit can be configured to detect a gate-open failure of the MOS based insulated gate transistor based on the conduction state of the channel and the indication of whether the gate voltage applied at the gate is sufficient to activate conduction in the channel when the MOS based insulated gate transistor is in an on…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.