Infrared detector having a directly bonded silicon substrate present on top thereof
US11587971B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 9, 2021 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Aug 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80894
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiOx, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.