Shielding structure for ultra-high voltage semiconductor devices
US11588028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2021 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Jan 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.