High electron mobility transistor
US11588046B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Jul 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.