Thin-film transistor and method for manufacturing the same, array substrates, display devices

US11588055B2 · kind B2 · utility

Assignees

• Ordos Yuansheng Optoelectronics Co., Ltd. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Wei Liu · Beijing, CN
• Yongbo Ju · Beijing, CN
• Xikang Jin · Beijing, CN
• Zhimin Wang · Xi'an, CN
• Jianbin GAO · Beijing, CN
• Xiaoguang Chen · Beijing, CN
• Xinbo ZHOU · Beijing, CN
• Jianjun Chen · Lund, SE

Key dates

• Filing date: Sep 25, 2018
• Grant date: Feb 21, 2023
• Expiry date: Jun 20, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0312

Abstract

The present disclosure provides a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor of the present disclosure include a plurality of insulating layers, among which at least one insulating layer on the low temperature polysilicon layer comprises organic material, so vias could be formed in the organic material by an exposing and developing process, thereby effectively avoiding the over-etching problem of the low temperature polycrystalline silicon layer caused by dry etching process. By adopting the method for manufacturing the film transistors of the present disclosure, the contact area and uniformity of the drain electrode and the low temperature polysilicon material layer can be increased; the conductivity can be improved; and the production cycle of products can be greatly reduced and thereby improving the equipment capacity.