Method for improving the performance of a heterojunction solar cell
US11588071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Feb 11, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present disclosure provides a method for rapidly treating a heterojunction solar cell fabricated using a crystalline silicon wafer doped exclusively with n-type dopants to improve surface passivation and carrier transport properties using the following steps: providing a heterojunction solar cell; the solar cell having an n-type silicon substrate exclusively doped with n-type dopants with a concentration higher than 1×1014 cm−3 and a plurality of metallic contacts; illuminating a surface portion of the solar cell for a period of less than 5 minutes and at a temperature between 200° C. and 300° C. with light having an intensity of at least 2 kW/m2 and a wavelength such that the light is absorbed by the surface portion and generates electron-hole pairs in the solar cell. The step of illuminating a surface portion of the solar cell is such that less than 0.5 kWh/m2 of energy is transferred to the surface portion and a temperature of the surface portion increases at a rate of at least 10° C./s for a period of time during illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.