Patent · US Active

Method of manufacturing a multi-layer PZT microactuator using wafer-level processing

US11588098B2 · kind B2 · utility

3Cited by
95References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 9, 2018
Grant dateFeb 21, 2023
Priority date
Expiry dateApr 1, 2041

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/42
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.