Method to effectively suppress heat dissipation in PCRAM devices
US11588106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Dec 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
In some embodiments, the present disclosure relates to a method of forming an integrated chip that includes depositing a phase change material layer over a bottom electrode. The phase change material is configured to change its degree of crystallinity upon temperature changes. A top electrode layer is deposited over the phase change material layer, and a hard mask layer is deposited over the top electrode layer. The top electrode layer and the hard mask layer are patterned to remove outer portions of the top electrode layer and to expose outer portions of the phase change material layer. An isotropic etch is performed to remove portions of the phase change material layer that are uncovered by the top electrode layer and the hard mask layer. The isotropic etch removes the portions of the phase change material layer faster than portions of the top electrode layer and the hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.