Acoustic wave device
US11588469B2 · kind B2 · utility
3Cited by
0References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Nov 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/6496
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a multilayer substrate including a reverse-velocity surface, a piezoelectric film, a low acoustic velocity material layer, a high acoustic velocity material layer, and an IDT electrode disposed on the piezoelectric film. In the IDT electrode, gap lengths of a first gap between a tip of each of first electrode fingers and a second busbar and a second gap between a tip of each of second electrode fingers and a first busbar are about 0.23λ or shorter, the gap lengths extending in an extension direction of the first and second electrode fingers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.