Method of forming a high temperature sensor
US11590576B2 · kind B2 · utility
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6References
21Claims
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Key dates
| Filing date | Jun 24, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Jun 24, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22C1/05
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of forming a high temperature sensor includes preparing a substrate having a surface from an electrically insulative material having a first coefficient of thermal expansion (CTE), preparing an electrical conductor from a metal material having a second CTE that is different from the first CTE, and creating an interface between the electrical conductor and the substrate with a CTE blending medium that is provided between the substrate and the electrical conductor. The CTE blending medium accommodates differing thermal expansion rates of the substrate and the electrical conductor at temperatures of at least 700° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.