Patent · US Active

Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure

US11594401B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 25, 2020
Grant dateFeb 28, 2023
Priority date
Expiry dateMar 5, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67069
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.