Method of making a semiconductor structure
US11594449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Mar 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor structure includes depositing a first passivation material between adjacent conductive elements on a substrate, wherein a bottommost surface of the first passivation material is coplanar with a bottommost surface of each of the adjacent conductive elements. The method further includes depositing a second passivation material on the substrate, wherein the second passivation material contacts a sidewall of each of the adjacent conductive elements and a sidewall of the first passivation material, a bottommost surface of the second passivation material is coplanar with the bottommost surface of each of the adjacent conductive elements, and the second passivation material is different from the first passivation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.