III-V semiconductor pixel X-ray detector
US11594570B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Mar 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8023
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 μm or at least 20 μm with respect to each highly doped semiconductor contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.