Transistor and method for manufacturing the same
US11594645B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Aug 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.