Elastic wave device
US11595023B2 · kind B2 · utility
0Cited by
0References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2019 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Dec 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/25
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a piezoelectric substrate made of LiNbO3, interdigital transducer electrodes on the piezoelectric substrate, and a first dielectric film provided on the piezoelectric substrate and the first dielectric film to cover the IDT electrodes and made of a silicon oxide. The IDT electrodes include a first metal film made of one metal selected from Pt, Cu, Mo, Au, W, and Ta. The Euler angles (ϕ, θ, ψ) of the piezoelectric substrate are (0±5°, −90°≤θ≤−70°, 0°±5°). The metal for the first metal film and the thickness hm/λ (%) match any of the combinations as follows:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.