Silicon nitride phased array chip based on a suspended waveguide structure

US11598917B2 · kind B2 · utility

Assignees

• CHONGQING INSTITUTE OF EAST CHINA NORMAL UNIVERSITY · CN
• SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• EAST CHINA NORMAL UNIVERSITY · CN

Inventors

• Heping Zeng · Chongqing, CN
• Jijun Feng · Chongqing, CN
• Mengyun Hu · Lo Wu, CN
• Xiaojun Li · Boynton Beach, US
• Qinggui Tan · Chongqing, CN
• Jinman Ge · Chongqing, CN

Key dates

• Filing date: Jun 3, 2021
• Grant date: Mar 7, 2023
• Expiry date: Jul 10, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/1215
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A silicon nitride phased array chip based on a suspended waveguide structure, which includes a silicon nitride waveguide area and a suspended waveguide area. The silicon nitride waveguide area includes a silicon substrate, a silicon dioxide buffer layer, a silicon dioxide cladding layer and a silicon nitride waveguide-based core layer. The silicon nitride waveguide-based core layer includes an optical splitter unit, a first curved waveguide, a thermo-optic phase shifter and a spot-size converter. The suspended waveguide area includes a second curved waveguide and an array grating antenna.