Thin film transistor array substrate and electronic device including the same
US11600677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2020 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Feb 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.