Display apparatus having an oxide semiconductor pattern
US11600684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2020 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Sep 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/873
Abstract
A display apparatus in which a thin film transistor of each pixel region includes an oxide semiconductor pattern is provided. The pixel regions can be disposed on a display area of a device substrate. The display area can be electrically connected to the gate driver by gate lines. An encapsulating element can be disposed on the thin film transistor of each pixel region. The encapsulating element can extend beyond the display area. The gate lines can overlap the encapsulating element. A barrier line can be disposed between the gate lines and the encapsulating element. The barrier line can include a hydrogen barrier material. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to the encapsulating element can be prevented or minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.