Light-emitting device

US11600749B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Shih-I Chen · Hsinchu, TW
• Wei-Yu Chen · Taichung, TW
• Yi-Ming Chen · Hsinchu, TW
• Ching-Pei Lin · Austin, US
• Tsung-Xian Lee · Hsinchu, TW

Key dates

• Filing date: Jun 8, 2018
• Grant date: Mar 7, 2023
• Expiry date: Jun 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.