Asymmetrical PN junction thermoelectric couple structure and its parameter determination method
US11600758B2 · kind B2 · utility
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Key dates
| Filing date | Mar 19, 2019 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2632
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention discloses an asymmetrical PN junction thermoelectric couple structure and its parameter determination method. By changing the structural parameters of p-type semiconductor or n-type semiconductor, the current generated by p-type semiconductor is equal to the current generated by the n-type semiconductor, so that the high-efficiency output of PN junction thermoelectric couple can be realized. Meanwhile, the present invention provides a method for determining the parameters of PN junction based on the numerical solution method. Finally, the optimal size parameters of PN junction are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.