Power semiconductor device protection circuit and power module
US11601054B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2019 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Mar 21, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device protection circuit includes: a drive circuit that drives a power semiconductor device; a current detector which includes a first resistor and an inductor connected in parallel; and a detection circuit that detects a short-circuit condition of the power semiconductor device. One end of the first resistor and one end of the inductor are connected to one terminal of the power semiconductor device. The detection circuit detects the short-circuit condition of the power semiconductor device by comparing a voltage of the one terminal of the power semiconductor device, which changes as a function of current flow through the first resistor and the inductor, with a short-circuit detection voltage. A reference potential of the drive circuit is connected to the other end of the first resistor and the other end of the inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.