Patent · US Active

Integrated piezoresistive and piezoelectric fusion force sensor

US11604104B2 · kind B2 · utility

1Cited by
214References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 3, 2022
Grant dateMar 14, 2023
Priority date—
Expiry dateFeb 3, 2042

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B3/0072
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.