Low power dual-sensitivity FG-MOSFET sensor for a wireless radiation dosimeter
US11604290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Apr 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1892
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 μm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.