Flash device and manufacturing method thereof

US11605641B2 · kind B2 · utility

Assignee

• CSMC TECHNOLOGIES FAB2 CO., LTD. · CN

Inventors

• Song Zhang · 安丰镇, CN
• Zhibin Liang · 安丰镇, CN
• Yan Jin · Singapore, SG
• Dejin Wang · 安丰镇, CN

Key dates

• Filing date: Oct 12, 2019
• Grant date: Mar 14, 2023
• Expiry date: Apr 7, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6891

Abstract

A flash device and a manufacturing method thereof. The method comprises: providing a substrate, and forming, on the substrate, a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer; wherein the floating gate polycrystalline layer is formed on the substrate, the floating gate oxide layer is formed between the substrate and the floating gate polycrystalline layer, a substrate region at one side of the floating gate polycrystalline layer is a first substrate region, a substrate region at the other side of the floating gate polycrystalline layer is a second substrate region; forming, on the tunneling oxide layer, located in the first substrate region, a continuous non-conductive layer, the non-conductive layer extending to the tunneling oxide layer at a side wall of the floating gate polycrystalline layer; and forming, on the tunneling oxide layer, a polysilicon layer.