Nitride semiconductor substrate and method of manufacturing the same
US11605716B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Jan 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a nitride semiconductor substrate suitable for a high frequency device. The nitride semiconductor substrate has a substrate, a buffer layer made of group 13 nitride semiconductors, and an active layer made of group 13 nitride semiconductors in this order, wherein the substrate is composed of a first substrate made of polycrystalline aluminum nitride, and a second substrate made of Si single crystal having a specific resistance of 100 Ω·cm or more, formed on the first substrate, the average particle size of AlN constituting the first substrate is 3 to 9 μm, and preferably, the second substrate grown by the MCZ method has an oxygen concentration of 1E+18 to 9E+18 atoms/cm3 and a specific resistance of 100 to 1000 Ω·cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.