Insulated gate bipolar transistor and fabrication method therefor
US11605725B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2019 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Jul 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
An insulated gate bipolar transistor and a fabrication method therefor, wherein the fabrication method for the insulated gate bipolar transistor comprises the following steps: implanting hydrogen ions, arsenic ions, or nitrogen ions into a substrate from a back surface of the insulated gate bipolar transistor so as to form an n-type heavily doped layer (202) of a reverse conduction diode, the reverse conduction diode being a reverse conduction diode built into the insulated gate bipolar transistor. The described fabrication method and the obtained insulated gate bipolar transistor from a recombination center in an n+ junction of the reverse conduction diode, thereby accelerating the reverse recovery speed of the built-in reverse conduction diode, shortening the reverse recovery time thereof, and improving the performance of the insulated gate bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.