Thin film transistor, method for fabricating the same, method for controlling the same, display panel and display device
US11605738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Nov 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This disclosure relates to the field of display technologies, and discloses a thin film transistor, a method for fabricating the same, a method for controlling the same, a display panel, and a display device. The thin film transistor includes: a base substrate, a semiconductor active layer on one side of the base substrate, a source electrically connected with one end of the semiconductor active layer, a drain electrically connected with the other end of the semiconductor active layer, a gate insulated from the semiconductor active layer, the source, and the drain, and a modulation electrode insulated from the semiconductor active layer, the gate, the source, and the drain. The modulation electrode is proximate to the drain, and an orthographic projection of the modulation electrode on the base substrate overlaps with an orthographic projection of the semiconductor active layer on the base substrate
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.