Stacked III-V semiconductor photonic device

US11605745B2 · kind B2 · utility

Assignee

• Azur Space Solar Power GmbH · DE

Inventor

• Gerhard Strobl · Stuttgart, DE

Key dates

• Filing date: Mar 22, 2021
• Grant date: Mar 14, 2023
• Expiry date: Mar 28, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

A stacked III-V semiconductor photonic device having a second metallic terminal contact layer at least formed in regions, a highly doped first semiconductor contact region of a first conductivity type, a very low doped absorption region of the first or second conductivity type having a layer thickness of 20 μm-2000 μm, a first metallic terminal contact layer, wherein the first semiconductor contact region extends into the absorption region in a trough shape, the second metallic terminal contact layer is integrally bonded to the first semiconductor contact region and the first metallic terminal contact layer is arranged below the absorption region. In addition, the stacked III-V semiconductor photonic device has a doped III-V semiconductor passivation layer of the first or second conductivity type, wherein the III-V semiconductor passivation layer is arranged at a first distance of at least 10 μm to the first semiconductor contact region.