Semiconductor suitable for use in photoanode
US11605746B2 · kind B2 · utility
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Key dates
| Filing date | Oct 9, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | May 19, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3298
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO4. The portion of the semiconductor having the crystal structure of FeWO4 includes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.