Method for making transition metal dichalcogenide crystal
US11608267B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 24, 2021 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Sep 22, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/72
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MX2 is provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MX2 polycrystalline powder, a MX2 seed crystal, and a transport medium. The MX2 polycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MX2 seed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MX2 seed crystal is placed at the deposition end.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.