Semiconductor photoresist composition and method of forming patterns using the composition
US11609494B2 · kind B2 · utility
2Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Apr 27, 2020 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Apr 27, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.