Non-volatile memory device, storage device having the same, and reading method thereof
US11610639B2 · kind B2 · utility
2Cited by
13References
19Claims
0Family size
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Key dates
| Filing date | Jun 2, 2021 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Jun 17, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1204
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command; and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.