Charged particle beam lithography system
US11610758B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Jan 15, 2020 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Jan 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31794
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.