Patent · US Active

Diffusion soldering with contaminant protection

US11610861B2 · kind B2 · utility

0Cited by

6References

12Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Victor Verdugo · Dresden, DE
Katrin Schmidt · Dresden, DE
Steffen Schmidt · Dresden, DE
Markus Schmitt · Neubiberg, DE

Key dates

Filing date	Sep 14, 2020
Grant date	Mar 21, 2023
Priority date	—
Expiry date	Jan 20, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/8382
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.