Semiconductor devices and methods of forming semiconductor devices
US11610896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2021 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Aug 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.