Semiconductor device having a butted contact, method of forming and method of using
US11610901B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2020 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Dec 3, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first transistor comprising a first gate structure over a first active region in a substrate. The semiconductor structure further includes a second active region in the substrate. The semiconductor structure further includes a first butted contact. The butted contact includes a first portion extending in a first direction and overlapping the second active region, and a second portion extending from the first portion in a second direction, different from the first direction, wherein the second portion directly contacts the first gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.