Fabrication of low-cost long wavelength VCSEL with optical confinement control

US11611195B2 · kind B2 · utility

Assignee

• MELLANOX TECHNOLOGIES, LTD. · IL

Inventors

• Yuri Berk · Kiryat Tivon, IL
• Vladimir Iakovlev · Yoqneam Illit, IL
• Tamir Sharkaz · Kfar Tavor, IL
• Elad Mentovich · Tel Aviv-Yafo, IL
• Matan Galanty · Korazim, IL
• Itshak Kalifa · Ramat Gan, IL

Key dates

• Filing date: Dec 30, 2020
• Grant date: Mar 21, 2023
• Expiry date: Jun 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/18319
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.