Transistor aging reversal using hot carrier injection
US11611338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2021 |
| Grant date | Mar 21, 2023 |
| Priority date | — |
| Expiry date | Aug 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/9401
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.