Patent · US Active

Through-silicon via detecting circuit, detecting methods and integrated circuit thereof

US11614481B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2021
Grant dateMar 28, 2023
Priority date
Expiry dateJun 8, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2843
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A TSV detecting circuit, TSV detecting methods, and an integrated circuit thereof are disclosed by the present disclosure. The TSV detecting circuit includes a first detecting module includes: a first comparison unit; a first input unit, for transmitting an input signal to a first input of the first comparison unit controlled by a first clock signal; a first switching unit for transmitting a signal of a first node to a second input of the first comparison unit controlled by a first detection control signal, the first node coupled to a first terminal of the TSV; and a second detecting module includes: a second input unit for transmitting the input signal to a second node controlled by a second clock signal; a second switching unit for transmitting a signal of the second node to a second terminal of the TSV controlled a second detection control signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.