Reference voltage generator based on threshold voltage difference of field effect transistors

US11614763B1 · kind B1 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Debesh Bhatta · San Diego, US
• Sulin Li · San Diego, US
• Shitong Zhao · San Diego, US
• Hui Wang · Cupertino, US
• John Abcarius · San Diego, US

Key dates

• Filing date: Jan 4, 2022
• Grant date: Mar 28, 2023
• Expiry date: Jan 4, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G05F1/468
• WIPO field: Control
• WIPO sector: Instruments

Abstract

An aspect of the disclosure relates to a reference voltage generator, including: a first field effect transistor (FET) including a first threshold voltage; a second FET including a second threshold voltage different than the first threshold voltage; a gate voltage generator coupled to gates of the first and second FETs; a first current source coupled in series with the first FET between first and second voltage rails; a second current source; and a first resistor coupled in series with the second current source and the second FET between the first and second voltage rails, wherein a reference voltage is generated across the first resistor.