Patent · US Active

Sub-threshold addressing and erasing in a magneto-electrophoretic writing medium

US11614809B2 · kind B2 · utility

1Cited by
60References
17Claims
0Family size

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Key dates

Filing dateDec 7, 2021
Grant dateMar 28, 2023
Priority date
Expiry dateDec 7, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F3/0383
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A magneto-electrophoretic medium that can be globally and locally addressed and erased. The medium provides a writeable display with no perceivable lag and the ability to write and erase with only minimal power requirements. In particular, the magneto-electrophoretic medium can be erased by providing a subthreshold electric stimulus and supplementing a second non-electric stimulus that disturbs the written state and allows the magneto-electrophoretic particles to return to their original state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.