Manufacturing of foreign oxide or foreign nitride on semiconductor
US11615952B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Nov 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.