Semiconductor device
US11616144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2019 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Sep 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a first active fin protruding from a substrate, a first gate pattern covering a side surface and a top surface of the first active fin, and first source/drain patterns at opposite sides of the first gate pattern, each of the first source/drain patterns including a first lower side and a second lower side spaced apart from each other, a first upper side extended from the first lower side, a second upper side extended from the second lower side. The first lower side may be inclined at a first angle relative to a top surface of the substrate, the second upper side may be inclined at a second angle relative to the top surface of the substrate, and the first angle may be greater than the second angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.