Thin film transistor and manufacturing method thereof, display substrate and display apparatus
US11616147B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 8, 2020 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Oct 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.