Semiconductor device and method for manufacturing semiconductor device
US11616149B2 · kind B2 · utility
0Cited by
9References
15Claims
0Family size
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Key dates
| Filing date | Nov 28, 2018 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Nov 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A semiconductor device with improved reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, and an insulator over the third oxide. The second oxide contains In, an element M (M is Al, Ga, Y, or Sn), and Zn. The first oxide and the third oxide each include a region whose In concentration is lower than that in the second oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.