Electrometry by optical charge conversion of defects in the solid-state
US11619660B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2019 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Jun 12, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R29/0885
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems are disclosed for sensing an environment electric field. In one exemplary implementation, a method includes disposing a sensor in the environment, wherein the sensor comprising a crystalline lattice and at least one optically-active defect in the crystalline lattice; pre-exciting the crystalline lattice to prepare at least one defect in a first charge state using a first optical beam at a first optical wavelength; converting at least one defect from the first charge state to a second charge state using a second optical beam at a second optical wavelength; monitoring a characteristics of photoluminescence emitted from the defect during or after the conversion of the at least one defect from the first charge state to the second charge state; and determining a characteristics of the electric field in the environment according to the monitored characteristics of the photoluminescence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.